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知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。

知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。

It is possible to modify the talked about parameters, and Review it which has a "great" consequence which will take 2 hours siumlation time. Dependant upon your standards, you could increase the simulation time.

So can anyone be sure to explain how FET with small threshold voltage has better pace and better leakage latest even though FET with large threshold is going to be slow but small on ability?

知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。

That means I really have to simulate the circuit lots of instances to receive the results but The problem is that every simulation takes about two hours and just helps make the get the job done very slow.

知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。

i had very same difficulty with Pictures , cek tat the sample information operate in usual velocity, i cudnt take care of the popularsongs situation fully, check out getting rid of the crystal and putting mcu pace at 1Mhz in its Attributes

* You have quite a few wires gonna ground as a result of other wires. The simulator is utilizing cpu cycles needlessly to calculate present-day in All those joined wires (regardless that their volt amount is zero). Give Just about every of Individuals wires its personal floor.

yes considering the fact that in LVT threshhold voltage is lower turning on from off position might be quick, but How about turning from the unit from on popularsongs posture? because threshhold voltage is lower (0.2V) if the used gate voltage is 1V it will require to fall atleast 0.8V to turn off the LVT transistor.

In the event of lvt, conc. of doping and oxide thickness is much more Assess to hvt.. And this The explanation that far more the doping, popularsongs so additional pace plus much more leakage Assess to hvt.

知乎，让每一次点击都充满意义 —— 欢迎来到知乎，发现问题背后的世界。

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